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Switching Regulators Motor Controls Inverters Solenoid and Relay Drivers Fast Turn-Off Times 1.0 s (max) Inductive Crossover Time -- 20 Amps 2.5 s (max) inductive Storage Time -- 20 Amps * Operating Temperature Range -65 to + 200_C * Performance Specified for Reversed Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents * * * * *
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications such as:
SWITCHMODE is a trademark of Motorola, Inc.
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 1 Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Base Current -- Continous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Thermal Resistance, Junction to Case Characteristic Rating
v 10%.
Symbol
Symbol
TJ, Tstg
VCEO
VCEV
RJC
VEB
IC ICM
IB IBM
PD
TL
50
8
MJ10015
600
400
- 65 to + 200
Max
250 143 1.43
275
0.7
8.0
10 15
50 75
50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
MJ10015 MJ10016
MJ10016
700
500
CASE 197-05 TO-204AE TYPE (TO-3 TYPE)
Order this document by MJ10015/D
Watts
W/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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MJ10015 MJ10016
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. (2) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. (2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTIC ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Crossover Time
Storage Time
Inductive Load, Clamped (Table 1)
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table 1)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Diode Forward Voltage (2) (IF = 20 Adc)
Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc)
Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) (IC = 50 Adc, IB = 10 Adc)
DC Current Gain (IC = 20 Adc, VCE = 5.0 Vdc) (IC = 40 Adc, VCE = 5.0 Vdc)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with Base Forward Biased
Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0)
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0, Vclamp = Rated VCEO)
2
(IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A, VBE(off) = 5.0 Vdc) (VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 s 2%). Duty Cycle Characteristic
v
v
MJ10015 MJ10016
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICEV Cob hFE IS/b tsv Vf td ts tr tf tc Min 400 500 25 10 -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 8 See Figure 7 0.36 0.14 Typ 1.0 0.3 0.8 0.3 2.5 -- -- -- -- -- -- -- -- -- -- 2.75 0.25 Max 750 350 1.0 2.5 1.0 2.5 1.0 0.3 5.0 2.2 5.0 -- -- -- -- mAdc mAdc Unit Vdc Vdc Vdc Vdc pF s s s s s s --
MJ10015 MJ10016
TYPICAL CHARACTERISTICS
100 2.4 2.0 V, VOLTAGE (VOLTS) IC/IB = 10 1.6
hFE, DC CURRENT GAIN
50
20
TC = 25C VCE = 5.0 V
1.2 TJ = 25C 0.8 TJ = 150C
10
5.0
0.5
1.0
2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS)
50
0.4
0.5
1.0
10 2.0 5.0 IC, COLLECTOR CURRENT (AMP)
20
50
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
2.8 IC, COLLECTOR CURRENT ( A)
104 VCE = 250 V 103 102 101 TJ = 125C 100C 75C REVERSE 100 25C 10-1 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8
2.4 V, VOLTAGE (VOLTS) IC/IB = 10 2.0 TJ = 25C
1.6
1.2
TJ = 150C
FORWARD
0.8 0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (AMP)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector Cutoff Region
1500 C ob , OUTPUT CAPACITANCE (pF) 1000 TJ = 25C 500
300 200
100
0.4
1.0
100 4.0 10 40 VR, REVERSE VOLTAGE (VOLTS)
400
Figure 5. Output Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJ10015 MJ10016
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
20 1
VCEX AND INDUCTIVE SWITCHING
INDUCTIVE TEST CIRCUIT
RESISTIVE SWITCHING
TURN-ON TIME 1
INPUT CONDITIONS
5V 0 2 1
TUT 1N4937 OR EQUIVALENT Vclamp RS = 0.1
2 Rcoil Lcoil VCC IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. VCC = 250 V RL = 12.5 Pulse Width = 25 s IB1
INPUT SEE ABOVE FOR DETAILED CONDITIONS
PW Varied to Attain IC = 100 mA
2
CIRCUIT VALUES
Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) INDUCTIVE TEST CIRCUIT
Lcoil = 180 H Rcoil = 0.05 VCC = 20 V OUTPUT WAVEFORMS
t1 Adjusted to Obtain IC t1 t2 Lcoil (IC VCC Lcoil (IC pk ) pk )
RESISTIVE TEST CIRCUIT
TEST CIRCUITS
TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1
Rcoil Lcoil VCC
IC(pk) t1 tf
TUT 1 2 RL VCC
tf Clamped t
VClamp
VCE or Vclamp TIME t2
t
Test Equipment Scope -- Tektronix 475 or Equivalent
* Adjust - V such that VBE(off) = 5 V except as required for RBSOA (Figure 8).
IC pk 90% Vclamp IC tsv trv tc VCE IB 10% Vclamp 90% IB1
Vclamp 90% IC tfi tti
and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCC IC (tc) f In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed.
10% IC pk
2% IC
TIME
Figure 6. Inductive Switching Measurements SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies
^
4
Motorola Bipolar Power Transistor Device Data
MJ10015 MJ10016
The Safe Operating Area figures shown in Figures 7 and 8 are specified ratings for these devices under the test conditions shown. 50 IC, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 TC = 25C BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 2.0 20 500 1000 5.0 10 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc 10 s
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two Iimitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the complete RBSOA characteristics.
MJ10015 MJ10016
0.02 0.01 0.005 1.0
Figure 7. Forward Bias Safe Operating Area
50 IC, COLLECTOR CURRENT (AMPS)
40
30
TURN-OFF LOAD LINE BOUNDARY FOR MJ10016 THE LOCUS FOR MJ10015 IS 100 V LESS IC IB1
20
u 10
10
VBE(off) = 5.0 V TC = 25C 0 200 300 400 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500
0
Figure 8. Reverse Bias Switching Safe Operating Area
100 POWER DERATING FACTOR (%) IB2(pk) , BASE CURRENT (AMP) FORWARD BIAS SECOND BREAKDOWN DERATING
10 9 8 7 6 5 4 3 2 1 SEE TABLE 1 FOR CONDITIONS, FIGURE 6 FOR WAVESHAPE. 0 1 2 3 4 5 6 7 8 IC = 20 A
80
60 THERMAL DERATING
40
20
0
0
40
80 120 TC, CASE TEMPERATURE (C)
160
200
0
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 9. Power Derating
Figure 10. Typical Reverse Base Current versus VBE(off) With No External Base Resistance 5
Motorola Bipolar Power Transistor Device Data
MJ10015 MJ10016
PACKAGE DIMENSIONS
A N C -T- E K D 2 PL U L -Q- -Y-
2 SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H K L N Q U INCHES MIN MAX 1.510 1.550 0.980 1.050 0.250 0.335 0.057 0.063 0.060 0.135 0.420 0.440 0.205 0.225 0.440 0.480 0.655 0.675 0.760 0.830 0.151 0.175 1.177 1.197 MILLIMETERS MIN MAX 38.35 39.37 24.89 26.67 6.35 8.51 1.45 1.60 1.52 3.43 10.67 11.18 5.21 5.72 11.18 12.19 16.64 17.15 19.30 21.08 3.84 4.19 29.90 30.40
0.25 (0.010)
M
TQ
M
Y
M
H
G
1
B
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 197-05 TO-204AE TYPE (TO-3 TYPE) ISSUE J
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
Motorola Bipolar Power Transistor Device Data
*MJ10015/D*
MJ10015/D

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